کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1676376 | 1518100 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Transparent conductive In2O3:Mo thin films prepared by reactive direct current magnetron sputtering at room temperature
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Transparent conductive In2O3:Mo thin films prepared by reactive direct current magnetron sputtering at room temperature Transparent conductive In2O3:Mo thin films prepared by reactive direct current magnetron sputtering at room temperature](/preview/png/1676376.png)
چکیده انگلیسی
An amorphous transparent conductive oxide thin film of molybdenum-doped indium oxide (IMO) was prepared by reactive direct current magnetron sputtering at room temperature. The films formed on glass microscope slides show good electrical and optical properties: the low resistivity of 5.9 × 10− 4 Ω cm, the carrier concentration of 5.2 × 1020 cm− 3, the carrier mobility of 20.2 cm2 V− 1 s− 1, and an average visible transmittance of about 90.1%. The investigation reveals that oxygen content influences greatly the carrier concentration and then the photoelectrical properties of the films. Atomic force microscope evaluation shows that the IMO film with uniform particle size and smooth surface in terms of root mean square of 0.8 nm was obtained.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 500, Issues 1–2, 3 April 2006, Pages 70–73
Journal: Thin Solid Films - Volume 500, Issues 1–2, 3 April 2006, Pages 70–73
نویسندگان
Wei-na Miao, Xi-feng Li, Qun Zhang, Li Huang, Zhuang-jian Zhang, Li Zhang, Xue-jian Yan,