کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1676434 | 1008997 | 2007 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Influence of aluminum nitride interlayers on crystal orientation and piezoelectric property of aluminum nitride thin films prepared on titanium electrodes Influence of aluminum nitride interlayers on crystal orientation and piezoelectric property of aluminum nitride thin films prepared on titanium electrodes](/preview/png/1676434.png)
Highly c-axis-oriented aluminum nitride (AlN) thin films have been prepared on titanium (Ti) bottom electrodes by using AlN interlayers. The AlN interlayers were deposited between Ti electrodes and silicon (Si) substrates, such as AlN/Ti/AlN/Si. The crystallinity and crystal orientation of the AlN films and Ti electrodes strongly depended on the thickness of the AlN interlayers. Although the sputtering conditions were the same, the X-ray diffraction intensity of AlN (0002) and Ti (0002) planes drastically increased, and the full-width at half-maximum (FWHM) of the X-ray rocking curves decreased from 5.1° to 2.6° and from 3.3° to 2.0°, respectively. Furthermore, the piezoelectric constant d33 of the AlN films was significantly improved from − 0.2 to − 4.5 pC/N.
Journal: Thin Solid Films - Volume 515, Issue 11, 9 April 2007, Pages 4565–4569