Preparation of CuIn1 − xGaxSe2 films by metalorganic chemical vapor deposition using three precursors

CuInGaSe2 thin films have been prepared by a low pressure metalorganic chemical vapor deposition technique using three precursors without additional Se. The properties of the resultant films have been examined by scanning electron microscopy, X-ray diffraction, micro-Raman scattering and absorption spectroscopy.