کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1676470 1008997 2007 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Design of diffusion barriers
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Design of diffusion barriers
چکیده انگلیسی

An exact analytical solution to metal diffusion in a triplet stack consisting of a barrier material layer, an interlayer dielectric, and a semiconductor substrate has been developed. The solution shows how the diffusive behavior of the metal depends on the material properties of the entire system. The resistance of the interconnect system to contamination is not linearly dependent on the material and geometrical properties and some properties, such as the barrier diffusivity and solubility, are significantly more important than others. The model was able to match the copper diffusion data of Shacham-Diamand [J. Electrochem. Soc., 140(8), 2427 (1993)] very well using material properties consistent with the available experimental data.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 11, 9 April 2007, Pages 4794–4800
نویسندگان
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