کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1676603 1009005 2006 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Noise and structural properties of reactively sputtered RuO2 thin films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Noise and structural properties of reactively sputtered RuO2 thin films
چکیده انگلیسی

Ruthenium dioxide thin films were reactively rf sputtered on SiO2/Si substrates and annealed in the temperature range from 150 to 500 °C. The structural and morphological properties of the films were investigated using Raman spectroscopy, transmission electron microscopy and atomic force microscopy. The increase of grain size was improved with annealing temperature. After annealing at 500 °C, the roughening of the RuO2/SiO2 interface was observed. The electrical behaviour was analysed by resistivity, thermal coefficient of resistance and low frequency noise. Good correlation between structural and electrical properties of RuO2 films was established.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 496, Issue 2, 21 February 2006, Pages 214–220
نویسندگان
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