کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1676609 1009005 2006 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Ellipsometric analysis of ion-implanted polycrystalline silicon films before and after annealing
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Ellipsometric analysis of ion-implanted polycrystalline silicon films before and after annealing
چکیده انگلیسی

A study of arsenic ion-implanted polycrystalline silicon films before and after annealing at various temperatures has been performed using spectroscopic ellipsometry in the ultraviolet to the visible spectral region. Using the Bruggeman effective medium approximation, an optical/structural model is presented for all the annealed samples explaining the measurements. Ellipsometric measurements reveal important structural changes as a function of annealing temperature which provide an interesting inside into the annealing kinetics of ion-implanted polycrystalline silicon films. This work also demonstrates the importance of spectroscopic ellipsometry in determining non-destructively the dielectric functions in materials that have undergone complex processing.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 496, Issue 2, 21 February 2006, Pages 253–258
نویسندگان
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