کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1676684 | 1009005 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Stress formation in evaporated amorphous Ge–Se and Ge–Se–Ga(Tl, B) thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Thin amorphous chalcogenide films from the GeSex (x = 1–5), (GeSe4)100−yGay and (GeSe5)100−y Ga(Tl, B)y (y = 5, 10, 15, 20) systems have been prepared by thermal evaporation and characterized with respect to their internal stress using a cantilever technique. The correlations between the stress, the composition and the structure of the films were investigated. The obtained results were related with some structural and mechanical parameters of the glasses like mean coordination number, number of constrains per atom, density, compactness, microhardness and Young's modulus. For all investigated chalcogenide films a stress relaxation with the time was observed as a result of spontaneous structural rearrangements.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 496, Issue 2, 21 February 2006, Pages 718–723
Journal: Thin Solid Films - Volume 496, Issue 2, 21 February 2006, Pages 718–723
نویسندگان
C. Popov, S. Boycheva, P. Petkov, Y. Nedeva, B. Monchev, S. Parvanov,