کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1676685 | 1009005 | 2006 | 11 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Steady-state and impedance study of n-GaAs in H2SO4 solution: Mechanism analysis Steady-state and impedance study of n-GaAs in H2SO4 solution: Mechanism analysis](/preview/png/1676685.png)
In this paper, a study on the electrochemical impedance of anodic decomposition of n-GaAs in 0.5 M sulfuric acid, combined with steady-state polarization techniques, is presented. Both dark and daylight conditions have been investigated for comparison of their influence on polarization curves and impedance by hole injection in a potential range from open circuit to breakdown. An inductive loop appears if a high enough positive potential is applied for both conditions, while recombination resistance is only observed for the daylight case. Quantitative simulation of the impedance spectra suggests that the rate-determining step for corrosion/photocorrosion is the generation of mobile intermediates, e.g., AsGa+, which are then replaced by competition between a Faradaic process involving immobile intermediate formation and a parallel chemical step to form AsGa–OH.
Journal: Thin Solid Films - Volume 496, Issue 2, 21 February 2006, Pages 724–734