کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1676709 1009007 2006 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Comparative study of the electrical properties of diamond films grown by microwave plasma assisted and hot-filament chemical vapor deposition
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Comparative study of the electrical properties of diamond films grown by microwave plasma assisted and hot-filament chemical vapor deposition
چکیده انگلیسی

Schottky diodes were built on different polycrystalline diamond films grown by Microwave Plasma and Hot Filament Chemical Vapor Deposition and their electrical properties were studied. The barrier height increased with the diamond film quality and the corresponding ideality factor decreased. Even though the lower-quality HFCVD film displayed poor rectifying properties, it was found to be much less sensitive to variations in the operating conditions (air vs. vacuum). The activation energies of the films depend on morphological parameters, as preferable grain size or orientation. The bulk conduction also depends on the quality of the deposited films, changing from ohmic to trap-free or shallow trap SCLC and SCLC with an exponential distribution of traps. The hypothesis of using the electrical measurements as an indicator for film quality has been discussed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 1, 25 September 2006, Pages 106–112
نویسندگان
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