کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1676739 | 1009007 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of a large area scanning PECVD deposition system with small size RF electrodes
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Characterization of a large area scanning PECVD deposition system with small size RF electrodes Characterization of a large area scanning PECVD deposition system with small size RF electrodes](/preview/png/1676739.png)
چکیده انگلیسی
We have conducted characterization of a scanning plasma enhanced chemical vapor deposition (PECVD) system for producing controlled non-uniform deposition or etching profiles. Both self-bias and plasma potential showed that the plasma conditions were disturbed significantly when the source was very close to the chamber wall but electron temperature and ion density were not affected significantly. It was found that a very thin but long tail of parasitic deposition was present over the entire large substrate. To eliminate the parasitic deposition an aperture (plasma guarding house) was constructed and was found to eliminate the parasitic plasma deposition. Deposited silicon nitride and silicon oxide thin films using the plasma guarding house in the scanning PECVD system showed very good optical properties similar to those obtained in conventional deposition methods. No multilayer structure was observed in TEM analysis on these films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 515, Issue 1, 25 September 2006, Pages 307-312
Journal: Thin Solid Films - Volume 515, Issue 1, 25 September 2006, Pages 307-312
نویسندگان
Y. Yin, L. Hang, M. Proschek, D.R. McKenzie, M.M.M. Bilek, S. Allan, J. Han, S. Rubanov, R.D.T. Lauder, R.B. Godfrey,