کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1676911 | 1518093 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Surface reaction and B atom segregation in ECR chlorine plasma etching of B-doped Si1−xGex epitaxial films
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The dry etching characteristics of B-doped Si1−xGex epitaxial films have been investigated using an electron–cyclotron–resonance chlorine plasma. The etch rate of Si1−xGex films increases with increasing Ge fraction and decreases with B doping. In particular, for the chlorine radical-dominant etching, the etch rate of B-doped films decreases with increasing etching time. The phenomena are caused by the segregation of B atoms on the etched surface. The segregated B atom concentration for B-doped Ge film is larger than that for B-doped Si film. It is also suggested that the decrease of B atom concentration when increasing the etching time for the Si1−xGex films is caused by the segregation of Si atoms on the etched surface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 508, Issues 1–2, 5 June 2006, Pages 301–304
Journal: Thin Solid Films - Volume 508, Issues 1–2, 5 June 2006, Pages 301–304
نویسندگان
Hang-Sup Cho, Masao Sakuraba, Junichi Murota,