کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1676947 | 1518094 | 2006 | 4 صفحه PDF | دانلود رایگان |

In order to reduce costs for thin film Si photovoltaic solar, large area VHF plasma CVD technology was developed. Two VHF voltages which had the phase difference controlled by the phase-shifter are supplied to the both ends of an electrode, which is successful in getting time-averaged uniformity of VHF voltage on the electrode. Using the frequency of 60 MHz, the a-Si film with the deposition rate of 1.7 nm/s ± 18% was prepared on a 1.4 m × 1.1 m glass substrate. A plasma CVD apparatus with 5 deposition chambers configured in a star shape was fabricated for the production of a-Si solar modules. 728 modules of 1.4 m × 1.1 m were manufactured during the long-run producing test in which deposition and plasma-cleaning were repeated. 93% of total modules manufactured in this test had electric outputs that were included within ± 2% of the deviation of the average module output.
Journal: Thin Solid Films - Volumes 506–507, 26 May 2006, Pages 13–16