کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1676948 1518094 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Species responsible for Si–H2 bond formation in a-Si:H films deposited using silane high frequency discharges
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Species responsible for Si–H2 bond formation in a-Si:H films deposited using silane high frequency discharges
چکیده انگلیسی

Species responsible for Si–H2 bond formation in a-Si:H films have been studied by using a cluster-suppressed plasma CVD reactor of a diode configuration. The concentration of Si–H2 bonds in a-Si:H films linearly decreases with decreasing the volume fraction Vf of clusters incorporated into the films, while the density of higher-order silane such as Si2H5 and Si3H7 correlates little with the bond concentration. The experimental results obtained using the diode configuration motivate us to employ a reactor of triode configuration in order to reduce the Vf value. The a-Si:H Schottky solar cell prepared with this configuration has the high initial fill factor FF = 0.60 and high stabilized value after light soaking FF = 0.56.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volumes 506–507, 26 May 2006, Pages 17–21
نویسندگان
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