کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1676955 | 1518094 | 2006 | 4 صفحه PDF | دانلود رایگان |
Diamond-like carbon (DLC) films were deposited by a plasma source ion implantation (PSII) on nylon, UHMWPE, PTFE and silicon wafer substrates. H2O, O2 and CH4 plasma were used as pretreatments for the substrate to investigate adhesion. C2H2 gas was used as working gas for the deposition of DLC films. Negative pulse voltage of − 10 kV was used to produce glow discharge plasma and implantation. The results showed that the implantation of carbon ions and DLC film deposition on the insulating materials were performed. Surface of the films was very smooth and none of the special structure was observed. The pretreatments of H2O and O2 PSII were effective to improve the adhesion of DLC films for PTFE substrate. The friction coefficients were 0.2 after 2000 rotations.
Journal: Thin Solid Films - Volumes 506–507, 26 May 2006, Pages 55–58