Production of crystalline Si nano-clusters using pulsed H2 + SiH4 VHF discharges

Crystalline Si nano-clusters are successfully produced using pulsed H2 + SiH4 VHF discharges. Their size can be controlled by changing the discharge duration. Si clusters of 1.6 nm in size and 100% crystallinity are produced. Collecting efficiency of them on the substrate decreases by one order of magnitude by heating it from room temperature to 200 °C, while their size is around 3 nm irrelevant to its temperature change.