کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1677055 1518097 2006 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Aluminum oxide thin dielectric film formation under elevated gravity conditions
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Aluminum oxide thin dielectric film formation under elevated gravity conditions
چکیده انگلیسی

In an attempt to grow low defect, dense crystalline aluminum hydrous oxide [AlO(OH)] films with better dielectric properties, hydration experiments on a high purity, high cubicity aluminum foil were conducted in deionized water at 85 °C under high gravity conditions. Fields from 100 up to 14,100 g and reaction times from 1 min up to 6 h were used. The films obtained were examined by field emission-scanning electron microscopy and X-ray diffraction. Hydration for up to 30 min using g-forces up to 3000 g showed the presence of only one crystalline phase with particle size 20–30 nm identified as pseudo-boehmite. A second phase, bayerite, was found to be growing from the pseudo-boehmite film at times greater than 30 min using fields above 5000 g.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 503, Issues 1–2, 1 May 2006, Pages 45–54
نویسندگان
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