کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1677104 1518102 2006 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Optimization of Al-CVD process based on elementary reaction simulation and experimental verification: From the growth rate to the surface morphology
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Optimization of Al-CVD process based on elementary reaction simulation and experimental verification: From the growth rate to the surface morphology
چکیده انگلیسی

We propose a method to reduce the surface roughness of Al film in the chemical vapor deposition (CVD) using dimethyl-aluminum-hydride (DMAH) as the precursor. An elementary reaction simulation was executed not only to predict the deposition rate but also to predict the coverage of the film by surface adsorbates. It was assumed that high surface coverage is essential in order to deposit smooth films because the adsorbates protect the surface from oxidation which causes discontinuous growth of crystal grains. According to this principle, the condition, that realizes both high surface coverage and high deposition rate at the same time by using the elementary reaction simulation, was sought. A nozzle inlet was used instead of a conventional showerhead. This drastically improved the surface morphology, showing the effectiveness of this theoretical optimization procedure.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 498, Issues 1–2, 1 March 2006, Pages 30–35
نویسندگان
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