Thin-film transistors with active layers of zinc oxide (ZnO) fabricated by low-temperature chemical bath method

Thin-film transistors (TFTs) with active channel layers of zinc oxide (ZnO) using a low-temperature chemical bath deposition have been studied. The ZnO films were fabricated on the defined-areas of bottom-gate type TFTs plate by immersing in a chemical bath containing zinc nitrate (Zn(NO3)2.6H2O) and dimethylamineborane (DMAB) aqueous solution at 60 °C. Silicon oxide (SiO2) was used as the gate insulator. Produced TFTs plate was dried in the air at 100 °C, specially, without any further annealing. Current–voltage (I–V) properties measured through the gate infer that the ZnO channel is n-type. Devices were achieved that Ion/Ioff ratio was more than 105, for which the channel mobility on the order of 0.248 cm2 V− 1 s− 1 has been determined.