Simulation and design of the emission wavelength of multiple quantum well structures fabricated by selective area metalorganic chemical vapor deposition

Selective area metalorganic chemical vapor deposition (SA-MOCVD) is effective for the monolithic integration of semiconductor optical devices. Using appropriate patterns of SiO2 masks on a substrate, we can fabricate multiple quantum wells (MQWs) of In1−xGaxAsyP1−y alloys with various emission wavelengths. Therefore, we can fabricate both passive elements and active components for different wavelengths on a substrate by a single growth. To make the best use of this SA-MOCVD process, we need a simulation tool that predicts the performance of the grown layer for a given mask pattern. We constructed a simulation that predicts the emission wavelength of MQW structures grown by SA-MOCVD. The simulation took into account the gas-phase diffusion of the precursors of In and Ga and their incorporation to the growth area. The rate parameters of these processes were extracted from the growth-rate profile in the SA-MOCVD of InP and GaAs. Based on these data, we simulated the photoluminescence (PL) peak wavelength of (1) In1−xGaxAsyP1−y bulk films and (2) MQWs consisting of these quaternary alloys. The simulated results agreed with experimental results, indicating the feasibility of computer-assisted design (CAD) of the mask patterns for SA-MOCVD.