High-quality structures with InAs/Al0.9Ga0.1As QDs produced by droplet epitaxy

► The structures with InAs quantum dots were grown by droplet epitaxy. ► Well-defined wetting layer is observed in the structures. ► This wetting layer has high smoothness of heterointerface and low concentration of defects. ► As a result the carrier transfer from the wetting layer to the QDs is highly efficient.