کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1792418 | 1023643 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Oxygen content increasing mechanism in Czochralski (CZ) silicon crystals doped with heavy antimony under a double-typed heat shield
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Oxygen content increasing mechanism in Czochralski (CZ) silicon crystals doped with heavy antimony under a double-typed heat shield Oxygen content increasing mechanism in Czochralski (CZ) silicon crystals doped with heavy antimony under a double-typed heat shield](/preview/png/1792418.png)
چکیده انگلیسی
⺠Effect of a heat shield geometry on the oxygen concentration has been investigated experimentally and numerically. ⺠Melt-flow patterns come from the competition between thermal buoyancy force around the crucible wall and centrifugal force from the seed rotation. ⺠Sizes of melt-flow patterns usually depend on the operation conditions. ⺠Under single-typed heat shield the high rotation rates allow the single crystal yield increased apparently while the oxygen concentration is kept unchanged. ⺠Under double-typed heat shield even at the low rotation rates oxygen content as well as the single crystal yield is augmented.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 325, Issue 1, 15 June 2011, Pages 27-31
Journal: Journal of Crystal Growth - Volume 325, Issue 1, 15 June 2011, Pages 27-31
نویسندگان
Do Won Song, Sang Hun Lee, Young Hee Mun, Hyo Kim,