کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1793905 1023685 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas
چکیده انگلیسی

AlxGa1−xN/AlN multiple quantum wells (MQWs) structures were grown by metalorganic vapour phase epitaxy (MOVPE) on pseudo AlN substrates using nitrogen as a carrier gas. Results of X-ray diffraction (XRD) and reciprocal space mapping (RSM) indicated no sign of strain relaxation in the quantum wells with respect to the AlN substrate. The MQW parameters such as thicknesses, growth rates and material compositions were extracted from XRD measurements and demonstrated an agreement with our growth conditions. No indication of parasitic reactions between ammonia and trimethyl-aluminium (TMAl) was detected in our growth process. Optical measurements revealed well-defined photoluminescence peaks at 288 and 280 nm, which are in a good agreement with the transmission experimental data. The piezo-electric field value in the studied structures was estimated to be 900 kV/cm.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 310, Issue 23, 15 November 2008, Pages 4927–4931
نویسندگان
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