کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1793924 | 1023685 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of Ga-doped ZnO by MOVPE using diisopropylzinc and tertiary butanol
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Gallium-doped ZnO thin films were grown on quartz substrates by metalorganic vapor phase epitaxy using diisopropylzinc (Di-PrZn) as a zinc source and tertiary butanol (t-BuOH) as an oxygen source. Triethylgallium (TEG) was used as a gallium source. A vertical-type reactor with a high-speed rotating disk and a conventional horizontal-type reactor were used in these experiments. The growth temperature was 350 °C, and the growth pressure was 76 Torr. The range of Ga flow ratios [TEG]/([TEG]+[Di-PrZn]) was between 0% and 11%. The thin film properties were evaluated by Raman scattering, X-ray diffraction, Hall effect and transmittance measurements. The thin films grown by using these source materials exhibited a low resistivity up to 2.21Ã10â4 Ω cm, and a high optical transparency over 80%.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 310, Issue 23, 15 November 2008, Pages 5003-5006
Journal: Journal of Crystal Growth - Volume 310, Issue 23, 15 November 2008, Pages 5003-5006
نویسندگان
Naoki Nishimoto, Takahiro Yamamae, Takashi Kaku, Yuki Matsuo, Kasilingam Senthilkumar, Obuliraj Senthilkumar, Jun Okamoto, Yasuji Yamada, Shugo Kubo, Yasuhisa Fujita,