کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1794211 | 1023693 | 2009 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Transmission electron microscopy (TEM) techniques are applied to characterize the interfaces of epitaxial III-V semiconductor heterostructures with high spatial resolution and to analyze compositional variations at interfaces. As expected, realistic interfaces of compound semiconductors are not chemically sharp but there is a transition region at the interface. The functional dependence of the smooth change in composition is sigmoidal and can be described using an analytical expression, thus enabling a quantitative characterization of the interface width. The model gives a very good description of the distribution profiles and applies to several material systems, including the interfaces of As-based alloys and those of the non-common-atom InAs/GaSb short-period superlattices. The analysis of (Ga,In)(N,As)/GaAs quantum wells reveals that there is a connection between the interface properties in this material system and the miscibility gap of the alloy.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 311, Issue 7, 15 March 2009, Pages 1739-1744
Journal: Journal of Crystal Growth - Volume 311, Issue 7, 15 March 2009, Pages 1739-1744
نویسندگان
E. Luna, F. Ishikawa, B. Satpati, J.B. Rodriguez, E. Tournié, A. Trampert,