کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1794619 | 1524481 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Selective growth of GaN on sapphire substrates treated with focused femtosecond laser pulses
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
We developed a novel selective growth technique for metalorganic chemical vapor deposition (MOCVD) growth of GaN using an unique substrate treatment procedure; sapphire substrates were treated and patterned with focused femtosecond laser pulses. By adjusting laser-irradiation conditions, GaN film growth could be suppressed over the laser-irradiated region. Using organic layer deposition onto a sapphire substrate prior to laser irradiation, we could achieve selective growth of GaN without sapphire ablation. Compared with the conventional technique, the present selective growth procedure is characterized by patterning without the need for the etching process or mask layers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 310, Issue 24, 1 December 2008, Pages 5278–5281
Journal: Journal of Crystal Growth - Volume 310, Issue 24, 1 December 2008, Pages 5278–5281
نویسندگان
Hisashi Matsumura, Shunro Fuke, Takayuki Tamaki, Yasuyuki Ozeki, Kazuyoshi Itoh, Yasuo Kanematsu,