کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1795085 | 1023714 | 2007 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Polarity dependence of AlN {0 0 0 1} decomposition in flowing H2
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Polarity dependence of AlN {0 0 0 1} decomposition in flowing H2 Polarity dependence of AlN {0 0 0 1} decomposition in flowing H2](/preview/png/1795085.png)
چکیده انگلیسی
The thermal stabilities of Al- and N-polarity AlN layers grown on (0 0 0 1) sapphire substrates were investigated at temperatures ranging from 1100 to 1400 °C in various gas flows (He, H2 and H2+NH3). Decomposition of AlN occurred in flowing H2, while it did not occur in He or H2+NH3 flow. The decomposition rate in H2 increased with an increase in the temperature over 1200 °C, and the decomposition rate of the Al-polarity AlN layer was found to be lower than that of the N-polarity AlN layer at each temperature. The decomposition reaction of AlN and the relationship between the polarities of the AlN layers and their different decomposition rates are discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 305, Issue 2, 15 July 2007, Pages 366–371
Journal: Journal of Crystal Growth - Volume 305, Issue 2, 15 July 2007, Pages 366–371
نویسندگان
Yoshinao Kumagai, Kazuhiro Akiyama, Rie Togashi, Hisashi Murakami, Misaichi Takeuchi, Toru Kinoshita, Kazuya Takada, Yoshinobu Aoyagi, Akinori Koukitu,