کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1795279 1524483 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Atomically controlled doping of nitrogen on GaAs(0 0 1) surfaces
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Atomically controlled doping of nitrogen on GaAs(0 0 1) surfaces
چکیده انگلیسی

We studied a technique of atomically controlled nitridation doping on GaAs(0 0 1) using (3×3) nitrogen (N)-stabilized reconstruction. Ordering of the N-stabilized surface has been found to depend on the (2×4)-reconstructed structures of GaAs(0 0 1). Nitridation transforms the (2×4) surfaces into the (3×3) by way of a new intermediate (3×4) surface. From these results, we proposed a model of the nitridation process on the GaAs(0 0 1) surface. Furthermore, layer-by-layer growth of a GaAs-capping layer has been confirmed on the nitrided surface. The atomically doped N-related isoelectronic centers show strong emission lines of excitons bound to N pairs ordered along [1 1 0].

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volumes 301–302, April 2007, Pages 34–37
نویسندگان
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