کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1795605 1023725 2007 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Selective epitaxial growth of AlN and GaN nanostructures on Si(1 1 1) by using NH3 as nitrogen source
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Selective epitaxial growth of AlN and GaN nanostructures on Si(1 1 1) by using NH3 as nitrogen source
چکیده انگلیسی

The very first stages of AlN and GaN epitaxial growth by molecular beam epitaxy on the Si(1 1 1) surface using NH3 as nitrogen source are studied mainly using reflection high-energy electron diffraction and scanning tunnelling microscopy. This study is performed in order to find a way to selectively nucleate AlN and GaN on Si(1 1 1). Exposing the Si surface to NH3 is sufficient even at very low pressure to provoke the formation of β-Si3N4-like zones at the surface. Such zones are stable under Ga deposition but are converted into AlN by Al deposition. Therefore, combining partial surface nitridation and Al deposition gives rise to the selective epitaxy of AlN clusters in the nitrided zones. Moreover, the subsequent exposure to NH3 and Ga leads to the growth of GaN only in places where AlN has previously nucleated.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 303, Issue 2, 15 May 2007, Pages 419–426
نویسندگان
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