کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1797450 1023789 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Growth of Ga- and N- polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Growth of Ga- and N- polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers
چکیده انگلیسی

Following an already established polarity control scheme for GaN thin films, we developed a process to simultaneously grow Ga- and N-polarity layers side by side on c-plane sapphire. The simultaneous growth is achieved by properly treating the AlN nucleation/buffer layer and subsequent substrate annealing. During this process, the growth is mass-transfer-limited, permitting the same growth rate for both types of polarity domains. Smooth domains of both polarity types (RMS roughness ∼1–2 nm) were obtained.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 287, Issue 2, 25 January 2006, Pages 586–590
نویسندگان
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