Geochemistry and magmatic history of eclogites and ultramafic rocks from the Chinese continental scientific drill hole: Subduction and ultrahigh-pressure metamorphism of lower crustal cumulates

Three distinct groups of eclogites (low-Mg–Ti eclogites, high-Ti eclogites and Mg-rich eclogites) and ultramafic rocks from the depth interval of 100–680 m of the Chinese Continental Scientific Drill Hole were studied. The low Mg#s (= 100⁎molar Mg/(Mg + Fe)) (81–84%) and low Ni (1150–1220 ppm) and high Fe2O3total (13–15 wt.%) contents of ultramafic rocks suggest a cumulate origin. Mg-rich eclogites show middle and heavy REE enrichments, which could not be produced by metamorphic growth of garnet. Instead, if the rocks formed from a light REE enriched magma, there may be an igneous precursor for some garnets in their protolith. Alternatively, perhaps they formed from a light REE depleted magma without garnet. The high-Ti eclogites are characterized by unusually high Fe2O3total contents (up to 24.5 wt.%) and decoupling of high TiO2 from low Nb and Ta contents. These features cannot be produced by concentration of rutile during UHP metamorphism (even for samples with TiO2 > 4 wt.%) of high-Ti basalts, but could be attributed to crystal fractionation of titanomagnetite (for those with TiO2 < ∼ 4 wt.%) or titanomagnetite + ilmenite (for those with TiO2 > ∼ 4 wt.%). Thus, we suggest that protoliths of the high-Ti eclogites were titanomagnetite/ilmenite-rich gabbroic cumulates. As a whole, the low-Mg–Ti eclogites are geochemically complementary to the high-Ti eclogites, Mg-rich eclogites and ultramafic rocks, and could be metamorphic products of gabbroic/dioritic cumulates formed by high degree crystal fractionation. All these observations suggest that parental materials of the ultramafic rock-eclogite assemblage could represent a complete sequence of fractional crystallization of tholeiitic or picritic magmas at intermediate to high pressure, which were later carried to ultrahigh-pressure conditions during a continental collision event.