کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
4717398 | 1638753 | 2008 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dehydroxylation of omphacite of eclogite from the Dabie-Sulu
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موضوعات مرتبط
مهندسی و علوم پایه
علوم زمین و سیارات
ژئوشیمی و پترولوژی
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چکیده انگلیسی
Dehydroxylation of omphacites in eclogites from UHP Dabie-Sulu terrain has been investigated using a combined method of petrological observations, mineral chemistry, heat treatment, Mössbauer, and micro-FTIR spectroscopy. Progressive heating of omphacite in air up to 1100 °C results in complex, multi-stage processes involving oxidation and dehydrogenation at different temperatures. During heating, Fe2+ at the M1 site is oxidized to Fe3+, accompanied by a decrease in the intensity of the 3460 cmâ 1 OH band. This reaction can be described as Fe2+(M1) + (OH)â = Fe3+(M1) + O2â(O3) + 1/2H2, and most likely represents loss of H bonded to O1 adjacent to the M1 site. At higher temperatures, continued oxidation results in further dehydroxylation due to H loss from OH bands 3530 cmâ 1 and 3630 cmâ 1. These bands represent H defects with higher thermal stability/slower diffusivity. In this case, oxidation of Fe2+ provides a means for charge-balancing H loss over the whole crystal structure, rather than locally. OH bands at 3530 and 3630 cmâ 1 are consistent with H incorporation onto O2, with vibration of OH dipoles towards adjacent tetrahedral vacancies. Rapid loss of H during annealing at even low temperatures implies that significant H loss from eclogites occurs during exhumation. Furthermore, changes in relative OH band intensity are expected during exhumation due to different thermal behaviour of H defects in omphacite. As such, the ratio of OH bands in omphacite spectra could be used to deduce exhumation conditions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Lithos - Volume 105, Issues 1â2, September 2008, Pages 181-190
Journal: Lithos - Volume 105, Issues 1â2, September 2008, Pages 181-190
نویسندگان
Wen Su, Ming Zhang, Simon A.T. Redfern, Geoffrey D. Bromiley,