کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
539889 871275 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of top power on a low-k film during oxygen strip in a TCP etch chamber
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Effect of top power on a low-k film during oxygen strip in a TCP etch chamber
چکیده انگلیسی

The modification of a SiOCH based low-k by oxygen plasma in a transformer coupled plasma (TCP) is reported. Modification of the film is studied as function of TCP power and time. Spectroscopic ellipsometry (SE) and Fourier transformed infrared absorption spectroscopy (FTIR) measurements are used for characterization. Both techniques show that the modification (damage) depth increases with increasing TCP power. Optical emission spectroscopy (OES) indicates that adding TCP power increases the O/O2+ ratio in the plasma. By means of FTIR and OES, evidence is found for the removal of hydrogen and carbon from the low-k during plasma exposure. Using a two-layer SE fitting model, and no TCP power a refractive index (RI) of 1.44 for the chemically altered top layer was found. This RI decreases with TCP power. Presumably, at increased TCP power, relatively more radicals are generated and they penetrate more easily because of a less dense top layer.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 87, Issue 3, March 2010, Pages 462–465
نویسندگان
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