کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5465711 | 1517970 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Approach to form planar structures based on epitaxial Fe1 â xSix films grown on Si(111)
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Approach to form planar structures based on epitaxial Fe1 â xSix films grown on Si(111) Approach to form planar structures based on epitaxial Fe1 â xSix films grown on Si(111)](/preview/png/5465711.png)
چکیده انگلیسی
An approach to form planar structures based on ferromagnetic Fe1 â xSix films is presented. Epitaxial Fe1 â xSix ironâsilicon alloy films with different silicon content (x = 0-0.4) were grown on Si(111) substrates. Structural in situ and ex situ characterization of the films obtained was made by X-ray diffraction, reflective high-energy electron diffraction, Rutherford backscattering spectrometry and transmission electron microscopy, which confirmed single crystallinity and interface abruptness for all films. Etching rates in the wet etchant (HF: HNO3: H2O = 1: 2: 400) for the films with various chemical composition were obtained. A nonmonotonic dependence of the etching rate on silicon content with a maximum for the composition Fe0.92Si0.08 was discovered. Moreover, the etching process is vertical and selective in the etching solution, i.e., the etching process takes place only in silicide film and does not affect substrate. As an example, a four-terminal planar structure was made of Fe0.75Si0.25/Si(111) structure using the etching rate obtained for this silicon content. Magneto-optical Kerr effect (MOKE) microscopy and transport properties characterization indicated successful etching process.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 642, 30 November 2017, Pages 20-24
Journal: Thin Solid Films - Volume 642, 30 November 2017, Pages 20-24
نویسندگان
A.S. Tarasov, A.V. Lukyanenko, I.A. Tarasov, I.A. Bondarev, T.E. Smolyarova, N.N. Kosyrev, V.A. Komarov, I.A. Yakovlev, M.N. Volochaev, L.A. Solovyov, A.A. Shemukhin, S.N. Varnakov, S.G. Ovchinnikov, G.S. Patrin, N.V. Volkov,