Temperature controlled interlayer disorder in ultrathin films of α-sexithiophene

The surface potential difference between the first and second layer of α-sexithiophene (6T) films on silane passivated SiO2 is observed using Kelvin Probe Force Microscopy. The relative surface potential between the first two layers changes sign depending on whether the films are grown at 70 °C or 120 °C substrate temperature. Complementary wide angle X-ray scattering observations show that this difference can be interpreted as the result of a higher concentration of interlayer hole traps due to poor out-of-plane ordering in films deposited at lower temperature. Molecular sliding and shifts in tilt angle are proposed as the microscopic origin of out-of-plane disorder leading to trapped charges.