کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5465754 | 1517970 | 2017 | 34 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of NH3 plasma treatment on the transient characteristics of ZnO nanorod-gated AlGaN/GaN high electron mobility transistor-based UV sensors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of NH3 plasma treatment on the transient characteristics of ZnO nanorod-gated AlGaN/GaN high electron mobility transistor-based UV sensors Effect of NH3 plasma treatment on the transient characteristics of ZnO nanorod-gated AlGaN/GaN high electron mobility transistor-based UV sensors](/preview/png/5465754.png)
چکیده انگلیسی
In this work, we examine the effect of NH3 plasma post-treatment on the ultraviolet (UV) photo-response transient characteristics of zinc oxide (ZnO) nanorod (NR)-gated AlGaN/GaN high electron mobility transistor (HEMT) photodetectors. The recovery time of the detectors (180Â ms) was significantly reduced to 80Â ms by the NH3 plasma-treatment for 180Â s, while no significant reduction in response time upon UV illumination is measured from the plasma-treated devices. The photoluminescence and X-ray diffraction reveals that continuous improvement in crystalline quality of NRs is observed with the plasma duration up to 180Â s. The X-ray photoelectron spectroscopy measurement shows that the surface band bending of ZnO crystals is lowered with the corresponding plasma treatment.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 642, 30 November 2017, Pages 69-75
Journal: Thin Solid Films - Volume 642, 30 November 2017, Pages 69-75
نویسندگان
Salahuddin Dogar, Waqar Khan, Fasihullah Khan, Sam-Dong Kim,