کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5465760 | 1517970 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
An optimized p-doped hole injection structure to improve the performance of organic light emitting diodes
ترجمه فارسی عنوان
یک ساختار تزریق سوراخ پتانسیل بهینه شده برای بهبود عملکرد دیودهای آلی نور
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
چکیده انگلیسی
Organic light emitting diodes (OLEDs) have been fabricated using various p-doped hole injection structures based on MoO3 doped 4,4â²-N,Nâ²-dicarbazole-biphenyl (CBP:MoO3) and 2,3,5,6-Tetrafluoro-7,7,8,8,-tetracyano-quinodimethane doped 4,4-bis[N-1-naphthyl-N-phenylamino]biphenyl (NPB:F4-TCNQ). It is found that the hole injection from indium tin oxide (ITO) to CBP:MoO3 is more efficient than that from ITO to NPB:F4-TCNQ, although the CBP:MoO3 is much less conductive than the NPB:F4-TCNQ. In addition, the CBP:MoO3 is helpful to block F4-TCNQ from diffusing into the emissive zone and thereby relieve the exciton quenching induced by organic p-dopant. Thus, the improved hole injection structure of ITO/10Â nm CBP:MoO3/5Â nm NPB:F4-TCNQ/5Â nm CBP:MoO3 is provided to diminish the hole and exciton losses, greatly increasing the device performance than the other hole injection structures. The current research is believed beneficial for the development of OLEDs based on a p-i-n junction.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 642, 30 November 2017, Pages 333-338
Journal: Thin Solid Films - Volume 642, 30 November 2017, Pages 333-338
نویسندگان
Wei Zhao, Zhihua Shi, Huan Cao, Li Chen, Dashan Qin,