Microstructural and electrical properties of heat treated resistive Ti/Pt thin layers

Resistance of meandered Ti/Pt resistors was found to decrease significantly above 500 °C and complies well with the microstructural rearrangements determined by AFM and AES analyses. It was further determined that by increasing the annealing temperature from 300 °C to 700 °C, a monotonic increase of temperature coefficient of resistance from 1400 ppm/°C to 2400 ppm/°C, respectively, was obtained. This represents a considerable improvement in sensitivity of Ti/Pt layers used as a temperature sensing devices. Resistance exhibited linear temperature dependency with nonlinearity better than 0.84%.