کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5465838 | 1517978 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
MgZnO based ultraviolet photodetector with high photoresponsivity achieved by fluorine doping
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We report a high-responsivity ultraviolet photodetector fabricated from fluorine doped Mg0.4Zn0.6O thin film grown by molecular beam expitaxy. The doped epitaxial film demonstrates a low resistivity with a carrier concentration of 2.18 Ã 1017 cmâ 3 and mobility of 2.67 cm2/V sâ 1 by Van der Pauw Hall measurements. With a further study of a single Ti/Au-MgZnO:F Schottky junction, it is found the device has a lowered barrier height of 0.59-0.64 eV compared with the calculated value. Our photodetector configured with a metal-semiconductor-metal structure with Ti/Au interdigital electrodes exhibits a high photoresonsivity of 80 A/W, nearly 800 times larger than that of undoped sample. This record-high value is attributed to the lowered Schottky barrier as well as reduced barrier thickness thanks to the effective fluorine doping.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 634, 31 July 2017, Pages 165-168
Journal: Thin Solid Films - Volume 634, 31 July 2017, Pages 165-168
نویسندگان
Yaonan Hou, Zengxia Mei, Zhanglong Liu, Huili Liang, Changzhi Gu, Xiaolong Du,