کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5465857 | 1517974 | 2017 | 50 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dislocation densities and alternating strain fields in CrN/AlN nanolayers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
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چکیده انگلیسی
Nitride multilayered structures have received substantial attention in practical applications and fundamental research owing to their exceptional mechanical properties. Here, the microstructures of the CrN/AlN multilayers with a nominal bilayer period (Î) of 6.0, 5.5, and 2.0Â nm were carefully characterized by spherical aberration corrected (CS-corrected) transmission electron microscopy (TEM). Detailed high-resolution TEM (HRTEM) studies, combined with quantitative atomic displacement measurements, reveal that the dislocation density is quite high in CrN/AlN multilayer, and it appears a higher number in CrN than in AlN layers. A strong inter-diffusion across the layers is observed for small bilayer period. The interplanar spacings oscillate, with a wavelength corresponding to the bilayer period and increasing amplitude for decreasing bilayer periods. Correspondingly, the strains oscillate and their magnitude generally increases with decreasing bilayer period. These observations are discussed in detail with the hardness enhancement observed in the CrN/AlN multilayers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 638, 30 September 2017, Pages 189-200
Journal: Thin Solid Films - Volume 638, 30 September 2017, Pages 189-200
نویسندگان
Xunlong Gu, Zaoli Zhang, Matthias Bartosik, Paul H. Mayrhofer, Huiping Duan,