کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5465893 | 1517974 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dielectric relaxation of CH3NH3PbI3 thin film
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Dielectric relaxation of CH3NH3PbI3 thin film Dielectric relaxation of CH3NH3PbI3 thin film](/preview/png/5465893.png)
چکیده انگلیسی
A film of CH3NH3PbI3 of thickness 1200Â nm is fabricated on fluorine doped tin oxide coated glass. The crystal structure of the material has been determined by X-ray diffraction method which shows that CH3NH3PbI3 is crystallized in the tetragonal phase with space group I4/mcm. The dielectric relaxation of the CH3NH3PbI3 thin film is investigated in the frequency range from 42Â Hz to 4.8Â MHz. The frequency dependent electrical data are analyzed in the framework of conductivity and electric modulus formalisms. Owing to the distribution of relaxation time, the relaxation mechanism in CH3NH3PbI3 is found to follow the Cole-Cole model. A comparison of the impedance with the electric modulus suggests the presence of localized relaxation process. The complex impedance plane plot is analyzed by a parallel electrical circuit consisting of a resistance and a capacitance. The frequency dependent conductivity spectra are found to follow the power law.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 638, 30 September 2017, Pages 277-281
Journal: Thin Solid Films - Volume 638, 30 September 2017, Pages 277-281
نویسندگان
Md. Sariful Sheikh, Anup Pradhan Sakhya, Alo Dutta, T.P. Sinha,