کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5465941 | 1517979 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of the duration of a wet KCN etching step and post deposition annealing on the efficiency of Cu2ZnSnSe4 solar cells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The influence of the duration of the KCN etching step on the efficiency of Cu2ZnSnSe4 (CZTSe) solar cells and Post deposition annealing (PDA) has been explored. CZTSe thin film absorbers prepared by selenization at 450 °C were etched by 5 wt% KCN/KOH from 30s up to 360 s before solar cell processing. KCN etching times above 120 s resulted in poor efficiencies. The fill factor (FF) and short circuit current density (Jsc) of these devices were affected severely. After annealing the solar cells at 200 °C in N2 atmosphere the best devices degraded and poor devices improved. Combined physical and optoelectronic characterization of the solar cells showed that PDA modifies the bulk defect density and also surface composition which reflects in the solar cell performance.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 633, 1 July 2017, Pages 166-171
Journal: Thin Solid Films - Volume 633, 1 July 2017, Pages 166-171
نویسندگان
Sylvester Sahayaraj, Guy Brammertz, Bart Vermang, Samaneh Ranjbar, Marc Meuris, Jef Vleugels, Jef Poortmans,