کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5465946 | 1517979 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Light absorption enhancement in ultra-thin Cu(In,Ga)Se2 solar cells by substituting the back-contact with a transparent conducting oxide based reflector
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Cu(In,Ga)Se2 (CIGS) based solar cells including an ultra-thin absorber layer (<Â 500Â nm) allow cost reduction but lack of sufficient generation of current. A solution would be to increase the optical path length within the CIGS absorber with a reflective back-contact. This study demonstrates that the standard Mo back-contact can be replaced by a Transparent Conducting Oxide back-contact coupled with a copper-reflector to enhance the short circuit current of cells. Simulation shows that the current density of 450Â nm thick CIGS can theoretically be increased up to 29.8Â mA/cm2 with this structure. 450 and 300Â nm thick coevaporated CIGS layer were deposited on ZnO:Al and SnO2:F at high temperature with an optimized NaF post-deposition treatment. The cells with the SnO2:F back contact coupled with the Cu-reflector reaches an efficiency of 11.4% for the 450Â nm thick CIGS and 9.5% for 300Â nm thick CIGS which are higher than reference cells with Mo (10.2% and 7.2% respectively). With the ZnO:Al substrate, the efficiency is lower (9.2% for 450Â nm thick CIGS). This is caused by a more resistive ZnO:Al/CIGS interface than SnO2:F/CIGS. Moreover, cells exhibit evidences of back surface recombination suggesting that a passivation of the back interface is required.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 633, 1 July 2017, Pages 202-207
Journal: Thin Solid Films - Volume 633, 1 July 2017, Pages 202-207
نویسندگان
Fabien Mollica, Marie Jubault, Frederique Donsanti, Anaïs Loubat, Muriel Bouttemy, Arnaud Etcheberry, Negar Naghavi,