کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5465952 | 1517979 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Efficient Cu(In,Ga)(Se,S)2 modules with sputtered Zn(O,S) buffer layer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We demonstrate that a simple and low-cost industrial sputter process can be used to substitute the InxSy:Na buffer and intrinsic ZnO layer with a single film of Zn(O,S). Cu(In,Ga)(Se,S)2 (CIGS) modules with an aperture area of 667Â cm2 and efficiencies up to 15.6% were prepared using a sputtered Zn(O,S) buffer layer. In comparison with our InxSy:Na reference, Zn(O,S) modules exhibit a superior short-circuit current which is overcompensated by a loss in the open-circuit voltage. The quality of the Zn(O,S)/CIGS interface, as judged from saturation current density and ideality factor, is close to that of the InxSy:Na reference. Electroluminescence images demonstrate a low and uniform recombination across the active module area. In first experiments, damp heat tests reveal a degradation in conversion efficiency of 4-6% relative. Hence, if the interface properties can be improved by further process optimization, the sputtered Zn(O,S) buffer is a promising candidate to increase the efficiency and reduce the costs of CIGS modules.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 633, 1 July 2017, Pages 231-234
Journal: Thin Solid Films - Volume 633, 1 July 2017, Pages 231-234
نویسندگان
Michael Algasinger, Thomas Niesen, Thomas Dalibor, Alexander Steigert, Reiner Klenk, Iver Lauermann, Rutger Schlatmann, Martha Ch. Lux-Steiner, Jörg Palm,