کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5465999 | 1517976 | 2017 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of carbon content and plasma power on room temperature photoluminescence characteristics of hydrogenated amorphous silicon carbide thin films deposited by PECVD
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effects of carbon content and plasma power on room temperature photoluminescence characteristics of hydrogenated amorphous silicon carbide thin films deposited by PECVD Effects of carbon content and plasma power on room temperature photoluminescence characteristics of hydrogenated amorphous silicon carbide thin films deposited by PECVD](/preview/png/5465999.png)
چکیده انگلیسی
The room temperature photoluminescence characteristics of a-SiCx:H thin films, deposited by plasma enhanced chemical vapor deposition technique with various carbon contents (x), at lower (30Â mW/cm2) (LP) and higher (90Â mW/cm2) (HP) power densities, were analyzed. The carbon content of the a-SiCx:H thin films was determined by X-ray photoelectron spectroscopy. The peak energies and the full width half maxima of the PL spectra were compared with the optical energies, determined by ultraviolet-visible transmittance measurements and a linearly correlated increase was observed as a function of x. PL peak energies shifted from 1.99Â eV to 2.60Â eV for LP and from 1.89 to 2.91Â eV for HP films. The PL mechanisms were investigated in the frame of the static disorder model and the stokes shift model. Our analyses indicated that for LP films the stokes shift model and for HP films the static disorder model are the dominant mechanisms of PL; moreover it was determined that both of these independent models have contributions to PL mechanism. Additionally, PL spectra were analyzed by the joint density of tail states (JDOS) PL model. The increase in the PL peak energies and spectrum widths by the increase in the plasma power and carbon content considerably fitted to JDOS PL model, which could exclusively represent the PL mechanism by itself.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 636, 31 August 2017, Pages 85-92
Journal: Thin Solid Films - Volume 636, 31 August 2017, Pages 85-92
نویسندگان
Ä°brahim GüneÅ, Kıvanç Sel,