کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5466122 | 1517981 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Regular distribution of (3Ã3) Bi-reconstructed stripes on Si(553) surface
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Regular distribution of (3Ã3) Bi-reconstructed stripes on Si(553) surface Regular distribution of (3Ã3) Bi-reconstructed stripes on Si(553) surface](/preview/png/5466122.png)
چکیده انگلیسی
The crystallographic and electronic structures of (3Ã3) Bi-induced reconstructions of Si(553) surface are investigated with reflection high energy electron diffraction (RHEED), scanning tunneling microscopy and angle resolved photoelectron spectroscopy. The α and β (3Ã3) superstructures have been obtained at 1/3 and 1 monolayer of Bi, respectively. RHEED experiments indicate that α(3Ã3) is formed on wide (111) terraces separated by (331) facets while the β(3Ã3) phase stabilizes regular distribution of steps over entire Si(553) surface. In the latter case the double atomic height steps separate Bi-reconstructed (111) terraces of about 3 nm in width. Only one orientation of (3Ã3) reconstruction is formed as a consequence of broken three-fold symmetry. The electronic structures of both Bi-induced superstructures are similar to the corresponding ones obtained for a flat Si(111) surface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 631, 1 June 2017, Pages 80-84
Journal: Thin Solid Films - Volume 631, 1 June 2017, Pages 80-84
نویسندگان
M. KopciuszyÅski, A. Mandziak, M. Dachniewicz, R. Zdyb,