کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5466276 | 1517984 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Residual chlorine in TiO2 films grown at low temperatures by plasma enhanced atomic layer deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
We have studied the presence of residual chlorine in thin TiO2 films grown by plasma enhanced atomic layer deposition (PEALD) at temperatures within 40-250 °C range, using x-ray photoemission spectroscopy, secondary ion mass spectrometry, grazing incidence x-ray diffraction and scanning electron microscopy. The source of the residual chlorine is TiCl4, which was used as a titanium precursor in ALD. The PEALD results are compared with the results on ALD films grown thermally in the same reactor. Films deposited by PEALD show a lower amount of residual chlorine, while chlorine concentration decreases with the processing temperature in both ALD techniques. In addition to the standard signal from residual chlorine bonded to Ti, a strong signal from ClO bonds was observed in PEALD samples grown at low temperatures. Our study also shows the development of an anatase phase in TiO2 films grown above 200 °C, which correlates well with the reduction of both types of residual chlorine in PEALD samples.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 628, 30 April 2017, Pages 142-147
Journal: Thin Solid Films - Volume 628, 30 April 2017, Pages 142-147
نویسندگان
Iva Saric, Robert Peter, Ivna Kavre Piltaver, Ivana Jelovica Badovinac, Kresimir Salamon, Mladen Petravic,