کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5466283 | 1517984 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
BaTiO3 thin films on platinized silicon: Growth, characterization and resistive memory behavior
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
We report on the fabrication and characterization of Ti/BaTiO3/Pt memristive devices. BaTiO3 films were grown on platinized silicon by pulsed laser deposition with different laser pulse energies. We prove the existence of a correlation between the fabrication conditions and the microstructure and stoichiometry of the films. It is suggested that the small grain size found on our BaTiO3 films destabilizes the structural tetragonal distortion and inhibits the appearance of long-range ferroelectric ordering. We show that even in absence of ferroelectric resistive switching (RS), two different RS mechanisms (metallic filament formation and oxidation/reduction of the Ti top electrode) compete, and can be selected by controlling the films stoichiometry and microstructure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 628, 30 April 2017, Pages 208-213
Journal: Thin Solid Films - Volume 628, 30 April 2017, Pages 208-213
نویسندگان
A. Román, M. Rengifo, L.M. Saleh Medina, M. Reinoso, R.M. Negri, L.B. Steren, D. Rubi,