کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5466323 1517987 2017 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Thermal-assisted band to band tunneling at the electron donor/acceptor energy harvesting assembly
ترجمه فارسی عنوان
گروهی که به کمک گرما کمک می کند تا باند تونل زنی را در مجامع جمع آوری انرژی اهدا کننده / گیرنده الکترون بگیرند
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
چکیده انگلیسی
Understanding interfacial electronic properties at the electron donor/acceptor energy harvesting assembly in photovoltaic devices is important in that it can provide insights into revealing charge carrier recombination mechanism at the interface. From temperature dependent contact resistance measurements at the aluminum-doped zinc oxide (AZO)/poly-hexylthiophene (P3HT)/aluminum-doped zinc oxide (AZO) structure in which AZO (electron acceptor) acts as highly conductive source and drain electrodes, charge transfer mechanism at the electron donor/acceptor interface is elucidated. In the mechanism, charge transfer process is initiated by band to band tunneling (BTBT) of hole carriers from AZO to P3HT through localized electronic states populated near the highest occupied molecular orbital (HOMO) level of the P3HT close to the AZO favored by energetic alignment between the conduction band edge of AZO and the HOMO of P3HT. Following BTBT, charge transfer process is completed by thermal activated hopping in the P3HT (electron donor) close to the AZO. It is found that thermally activated transport in the P3HT close to the AZO dominates the magnitude of the contact resistance, providing insights into the origin of carrier recombination mechanism at the donor/acceptor interface in photovoltaic devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 625, 1 March 2017, Pages 81-86
نویسندگان
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