کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5466382 | 1517990 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electroluminescence from SiNx layers doped with Ce3Â + ions
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Luminescent cerium doped silicon light emitting devices on indium tin oxide coated glass have been fabricated using plasma enhanced chemical vapour deposition and sputtering techniques. The electrical and electroluminescent properties of the devices have been investigated. The dominant conduction mechanism at high electric field is contributed to the Poole-Frenkel thermionic emission. The as deposited films emit a broad electroluminescence in the 500Â nm-800Â nm range. After laser annealing process, an additional 400Â nm-550Â nm band was observed. The EL spectra have been decomposed into two Gaussian bands at around 460Â nm and 650Â nm as a result of numerical fitting. The energy band centred at 460Â nm is attributed to the cerium doping of the film and the 650Â nm energy band is related to the luminescence from defect states in the SiNx lattice.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 622, 31 January 2017, Pages 142-147
Journal: Thin Solid Films - Volume 622, 31 January 2017, Pages 142-147
نویسندگان
Tomas Grigaitis, Arnas Naujokaitis, Vytautas Sabonis, KÄstutis Arlauskas,