کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5466473 1517993 2016 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Characterization of thin MnSi and MnGe layers prepared by reactive UV pulsed laser deposition
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Characterization of thin MnSi and MnGe layers prepared by reactive UV pulsed laser deposition
چکیده انگلیسی
Reactive pulsed laser deposition is a technique suitable for producing homogenous thin layers of silicon or germanium with high concentration of embedded manganese atoms. Linear calibration of EDS (Energy Dispersive X-ray Spectroscopy) was utilized for an elemental analysis of thin layers. MnSi and MnGe (manganese-silicon and manganese-germanium) layers containing non-oxidized Mn were obtained for Mn molar concentration in the range from 15 to 50%. Electron diffraction showed an amorphous character of MnSi layers. MnGe layers contained two different types of nanoparticles incorporated inside an amorphous matrix. The layers were semiconducting with resistivities from 10− 3 to 10− 5 Ω m.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 619, 30 November 2016, Pages 73-80
نویسندگان
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